METHOD OF PRODUCING INTERMETALLIC TARGET OF CU-GA USED TO OBTAIN THIN FILM BY MAGNETRON SPUTTERING Russian patent published in 2024 - IPC C23C14/35 C23C14/14 C22C9/00 B22D25/06 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing an intermetallic Cu-Ga target used to produce a thin film by magnetron sputtering. Copper and gallium in powder form are placed in a quasi-tight graphite container installed in a high-vacuum furnace. Furnace is pre-evacuated to residual pressure of 0.5⋅10^-4 Pa. Multi-stage heating of the furnace is carried out to T1 = 300°C and T2 = 500°C with exposures for 20 minutes. Then high-purity argon is poured into the volume of said furnace to atmospheric pressure. Melting of said copper and gallium, used in powder form, at temperature T = 700°C with holding for 1 hour to obtain an intermetallic target of Cu-Ga, consisting of intermetallic compounds CuGa₂ and Cu₂Ga.

EFFECT: obtaining a target and high-quality Cu-Ga films with properties which enable their use as precursors for carrying out a selenization process.

1 cl, 4 dwg, 1 tbl, 1 ex