METHOD OF PRODUCING LIGHT-ABSORBING LAYER OF THIN-FILM SOLAR CELLS FROM COPPER-INDIUM-GALLIUM-SULPHUR-SELENIUM Russian patent published in 2012 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of producing a light-absorbing layer of a thin-film solar cell from copper-indium-gallium-sulphur-selenium (MIGSS) using a vacuum liquid-phase method, comprising the following steps: (1) formation of stable initial solutions of copper, indium, gallium, sulphur and selenium by dissolving chalcogenides or halides of copper, indium, gallium and sulphur and selenium components in a solvent with strong coordination groups, followed by addition of a conditioner to the solution; where said sulphur and selenium components are selected from a group consisting of elementary sulphur, elementary selenium, amine or hydrazine salts of sulphur and selenium; (2) obtaining a mixed solution of copper, indium, gallium, sulphur and selenium by mixing the initial solutions obtained at step (1), in accordance with stoichiometric ratios of copper, indium and gallium in formula Cu_1-xInl_-yGa_ySe_2-zS_z in the light-absorbing layer of the solar cell based on MIGSS together with excess sulphur and selenium, where 0≤x≤0.3, 0≤y≤1, 0≤z≤2, and degree of excess of sulphur or selenium is equal to 0-800%; (3) using said mixed solution obtained at step (2) to produce a thin-film precursor on a substrate using a vacuum liquid-phase method; (4) drying and annealing said thin film precursor obtained at step (3) to obtain the desired composite thin-film from MIGSS.

EFFECT: invention enables to form the light-absorbing layer of thin-film solar cells based on MIGSS using a novel simple and efficient method.

14 cl, 6 ex, 7 dwg