PROCESS OF MANUFACTURE OF CHALCOPYRITE CuInSe,Cu(In,Ga)Se,CuGaSe THIN FILMS Russian patent published in 2003 - IPC

FIELD: photogalvanization. SUBSTANCE: invention can find use in production of solar elements for deposition of light-absorbing layers based on multicomponent chalcopyrite compounds of copper CuInSe₂,Cu(In,Ga)Se₂,CuGaSe₂). Essence of deposition of selenium, correspondingly on Cu-In, Cu-Ga and Cu-In-Ga metal films is carried out under atmospheric pressure in quasi-closed system with inert gas atmosphere formed by uninterrupted stream of inert gas with formation of selenium vapors from source unlimited for period of reaction and placed in same quasi-closed system at temperatures of deposition of selenium from 219 to 685 C in the course of time required for total deposition of selenium on metal film. EFFECT: reduced usage of selenium with simultaneous simplification of technology and increase of ecological safety in manufacture of chalcopyrite CuInSe₂,CuGaSe₂ and Cu(In,Ga)Se₂ thin films of large area. 5 dwg