FIELD: electrical engineering.
SUBSTANCE: invention relates to devices that can be used as spin (quantum) memory elements and logical data systems, as well as a source of spin-polarised (by laser) radiation in mm and submillimetre ranges. Proposed spin transistor comprises emitter made from ferromagnetic material, base made from oxide compound and detector made from monocrystal wide-band gap semiconductor. Emitter is made from thin-film composited material (EuO)Fe with EuO:Fe ratio making (4÷6):1. Field transistor emitter built around ferromagnetic semiconductor composite material (EuO)Fe in contact with wide-band gap nonmagnetic semiconductor GaAs (InSb, GaN) allows producing ambient-temperature spin transistor with operating characteristics controlled by external magnetic field.
EFFECT: notable spin polarisation.
4 dwg
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