QUANTUM SENSOR BASED ON QUANTUM DOT WITH IMPURITY COMPLEX (A+e) IN AN EXTERNAL ELECTRIC FIELD Russian patent published in 2024 - IPC G01N21/64 

FIELD: optonanoelectronics.

SUBSTANCE: quantum sensor based on a quantum dot with an impurity complex A⁺+e in an external electric field relates to optoelectronics and can be used in nanomedicine for diagnosing amino acids, oncological tumours and for nanotechnology of quasi-zero-dimensional structures. Quantum sensor has a base element in the form of a quantum dot (QD) containing an impurity complex A⁺+e, which is in an external electric field. Coulomb interaction of an electron with a hole is accompanied by a radiative transition of an electron to an energy level of the A⁺ centre with a radiation wavelength λ. Depending on the parameters of the QD, as well as on the temperature and intensity of the external electric field, the wavelength of the recombination radiation can vary in the range λ=0.1-7 mcm.

EFFECT: invention enables identification of amino acids from the spectrum of recombination radiation of colloidal quantum dots containing an impurity complex A⁺+e and tunnel-bound with a surrounding matrix containing charged amino acids.

1 cl, 3 dwg