FIELD: chemistry.
SUBSTANCE: invention relates to epitaxial growth of silicon carbide layers and can be used in avionics, electric automotive equipment, computer technology, as well as in making new generation body armour. Carbon is deposited on a flexible or solid substrate based on silicon in a stoichiometric ratio in the region of existence of silicon carbide. Obtained two-layer film structure is irradiated with pulse scanning laser radiation of above-threshold power until temperatures reach 1800-2200 °C, thus growing layers of silicon carbide. To obtain p-type silicon carbide, plasticized aluminium foil is placed on the carbon layer. To obtain n-type silicon carbide, a layer of carbon is sealed with foil from elements of the fifth main group of the Mendeleev's periodic table.
EFFECT: invention makes it possible to reduce labour intensiveness of epitaxial layers of silicon carbide and to increase productivity due to high rate of crystallisation and increase of substrate dimensions.
3 cl
