METHOD OF MAKING SEMICONDUCTOR DEVICE STRUCTURES BASED ON BLANK SUBSTRATE CLONING (VERSIONS) Russian patent published in 2015 - IPC H01L21/20 

FIELD: chemistry.

SUBSTANCE: method of making separate thin epitaxial layers of semiconductor chips with semiconductor device structures includes preparing the surface of a basic semiconductor substrate for homoepitaxy; depositing on the basic substrate by homoepitaxy a thin epitaxial layer of semiconductor identical to the basic substrate; treating the boundary between the basic substrate and the thin epitaxial layer with focused laser radiation to form a mechanically weak boundary; depositing an epitaxial device structure on the epitaxial layer; depositing top contacts on the epitaxial device structure; dividing the epitaxial device structure into separate chips, such that the vertical section passes through the epitaxial device structure and the epitaxial layer and ends near the mechanically weak boundary; attaching the epitaxial device structure divided into separate chips to a supporting substrate; separating the basic substrate from the epitaxial device structure; depositing lower contacts on the epitaxial device structure; polishing the separated basic substrate and transferring to the beginning of the cycle for reuse.

EFFECT: invention provides nondestructive separation of thin epitaxial layers with device structures with reuse of the basic substrate.

24 cl, 12 dwg