FLAW INSPECTION METHOD FOR INSULATING FILMS OF SEMICONDUCTOR STRUCTURES Russian patent published in 1997 - IPC

Abstract RU 2095885 C1

FIELD: measurement technology. SUBSTANCE: method for detecting flaws in insulating films due to activation of flaw reorganization process involves measurement of film refraction index by ellipse-metric method with structures heated and cooled down within temperature range of 350 to 400 K. Prior to measurements, structures are irradiated with alpha- particles of 4-5 MeV energy and flux density of 10⁸÷10⁹ cm^-2s^-1. Film quality is recognized by changes in refraction index. EFFECT: facilitated procedure. 1 tbl

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RU 2 095 885 C1

Authors

Skupov V.D.

Dates

1997-11-10—Published

1995-12-14—Filed