PROCESS OF MANUFACTURE OF S H F BIPOLAR TRANSISTORS Russian patent published in 1997 - IPC

FIELD: semiconductor devices. SUBSTANCE: process of manufacture of SHF bipolar transistors includes formation of collector and emitter junctions and high-doped regions of passive base on semiconductor substrate by way of selective diffusion of base additive into substrate. Diffusion of additive is conducted in temperature interval between 900-950 C in the course of 7-20 min to diminish capacitance of collector p-n junction and efficiency of collector circuit by decrease of horizontal dimensions of regions of passive base. EFFECT: diminished capacitance of collector p-n junction and efficiency of collector circuit.