BIPOLAR CMOS STRUCTURE MANUFACTURING PROCESS Russian patent published in 1998 - IPC

FIELD: microelectronics; manufacture of complementary vertical n-p-n and p-n-p transistor and complementary field-effect transistors on common substrate using self-aligning structure of type Aspekt bipolar transistor agreed with CMOS technology. SUBSTANCE: buried layers of two types of conductivity and epitaxial film are produced on common substrate, insulated pockets of two types of conductivity are formed in film to receive complementary bipolar and field-effect transistors, dope of lower silicon diffusivity than second-emitter dope is introduced in one of emitters of bipolar transistors, structure is baked at first high temperature, then second emitter and external-base region around it are doped with material of other type of conductivity with silicon concentration level lower than doping in external base region of bipolar transistor, then structure is baked at second lower temperature. EFFECT: facilitated procedure. 13 dwg