FIELD: manufacture of semiconductor structures. SUBSTANCE: in silicon structure manufacture additional seed operations are used. These operations are made in the course of growth of polycrystal silicon layer after definite thickness d (microns) is attained. Thickness is selected from condition 30 ≅ d ≅ A-30, where A (microns) is thickness of polycrystalline silicon after flattening operation in parallel to back side of monocrystalline silicon plate. EFFECT: increased output of serviceable structures due to improvement of mechanical strength of polycrystalline silicon layer. 4 dwg
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