FIELD: semiconductor engineering; manufacture of semiconductor substrates for light-emitting diodes. SUBSTANCE: polycrystal layer α-SiC is applied on substrate - monocrystal β-SiC by thermochemical precipitation method from steam phase. Precipitation temperature ranges from 1300 to 1900 C. Monocrystal α-SiC-polycrystal β-SiC complex is subjected to heat treatment under pressure of saturated vapor SiC for conversion of SiC to monocrystal. Heat treatment temperature ranges from 1800 to 2400 C. Monocrystal β-SiC is oriented in the same direction as crystallographic axis of monocrystal α-SiC. EFFECT: possibility of obtaining monocrystal of large size whose heat resistance, mechanical strength, capacitance, dielectric strength and resistance to external action exceed considerably well-known semiconductor materials. 12 cl
