IGFET Russian patent published in 1994 - IPC

Abstract SU 1355061 A1

FIELD: semiconductor microelectronics. SUBSTANCE: igfet has semiconductor substrate, regions of source and drain formed in the substrate, and gate electrode formed in dielectric layer; this layer overlaps partially the regions of source and drain. Concentration of doping impurity in the regions of source and drain under the gate is no lower than value corresponding to degeneration of the conductor to be used. EFFECT: reduced minimal voltage of drain. 1 dwg

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SU 1 355 061 A1

Authors

Lepilin V.A.

Mamichev I.Ja.

Prokof'Ev S.P.

Uritskij V.Ja.

Dates

1994-03-30—Published

1986-01-06—Filed