MIS TRANSISTOR Russian patent published in 1994 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: MIS transistor includes semiconductor substrate of first conduction type, regions of drain and source of second conduction type formed in it and electrode of gate. Between regions of drain and source additional region of first conduction type is formed which is located at distance from drain region bigger than width of depletion region of backward-biased p-n junction of drain at maximum operating voltage. Concentration of dopant in this region exceeds concentration of dopant in substrate and is determined by value of required threshold voltage. Minimal dimensions of additional region exceed width of region of spatial charge with inversion on its surface. Substrate has low concentration of dopant, for instance 1·10¹³-8·10¹⁴cm^-3 qu. cm for silicon. EFFECT: ensured stability of operation of transistor at reduced temperatures and great voltages. 1 dwg