PERIODICAL STRUCTURE LASER Russian patent published in 1996 - IPC

FIELD: electro-optics; fiber-optic communication lines. SUBSTANCE: laser has substrate made of p⁺GaAs, for example, pGa_1-xAl_xAs, layer, pGaAs layer, Ga_1-yAl_gAs, layer, the first additional semiconductor layer nGaAs with thickness of 0.3 mcm and impurity concentration of 1.5 x 10¹⁷ сm^-3, monocrystal insulating layer Ga_1-zAl_zAs:0(Z≃ 0,25) with thickness of 0.2 mcm, the second additional semiconductor layer with thickness of 0.15 mcm and concentration of doping impurity of 1.5 x 10¹⁷ cm^-3, field electrodes made inside grooves with inclined walls with depth of 0.3 mcm disposed at distances, which provide phase synchronization of radiation (l≲ 10 μm). Laser also has sources. Laser provides operating frequency band of order of 5 GHz. Irradiator and frame circuits may be made at single crystal. EFFECT: reduced control power; directional pattern control; increased boundary modulation frequency. 1 dwg