SEMICONDUCTOR LASER Russian patent published in 1994 - IPC

Abstract RU 2007804 C1

FIELD: semiconductor radiation sources. SUBSTANCE: layer of Al_xGa_1-xAs with thickness equal to summary thickness of emitters of heterostructure and layer of GaAs having thickness equal to thickness of contact layer are placed on surface of substate opposite to side of location of heterostructure with contact layer. EFFECT: improved stability of operational characteristics. 1 dwg

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RU 2 007 804 C1

Authors

Adlivankin A.S.

Alaverdjan S.A.

Dates

1994-02-15—Published

1989-12-04—Filed