SEMICONDUCTOR DEVICE Russian patent published in 2002 - IPC

FIELD: semiconductor engineering. SUBSTANCE: semiconductor device whose active region is formed from heteroepitaxial films made of wide-gap nitride compounds of A^IIIB^V type has single-crystal sapphire substrate with oriented effective surface incorporating directivity and carrying heteroepitaxial laminated structure of at least one buffer sublayer and one semiconductor film produced from Ga_1-xAl_xN compound, where 0≤x≤1, and electrodes; buffer sublayer is made of material whose crystalline structure relates to cubic syngony with parameter of elementary cubic cell chosen from condition where n are numerals 3, 4, 6, 8, 10; sublayer surface incorporates directivity <112 > parallel to substrate surface directivity . EFFECT: improved design. 5 cl, 5 dwg