FIELD: semiconductor engineering. SUBSTANCE: semiconductor device whose active region is formed from heteroepitaxial films made of wide-gap nitride compounds of AIIIBV type has single-crystal sapphire substrate with oriented effective surface incorporating directivity and carrying heteroepitaxial laminated structure of at least one buffer sublayer and one semiconductor film produced from Ga1-xAlxN compound, where 0≤x≤1, and electrodes; buffer sublayer is made of material whose crystalline structure relates to cubic syngony with parameter of elementary cubic cell chosen from condition where n are numerals 3, 4, 6, 8, 10; sublayer surface incorporates directivity <112 > parallel to substrate surface directivity . EFFECT: improved design. 5 cl, 5 dwg
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Authors
Dates
2002-07-27—Published
1997-11-28—Filed