FIELD-CONTROLLED LASER Russian patent published in 1996 - IPC

FIELD: optoelectronics; transmitting modules of FOL systems; base radiating cells of optoelectronic integrated circuits. SUBSTANCE: laser has semi-insulating GaAs substrate 1 carrying on one side layers forming double heterostructure; for example, n-FaAlAs layer 2 having common boundary with substrate, p-GaAs layer 3 functioning as active layer of laser radiating part, and p-AlGaAs layer 4 with heavily doped p⁺-GaAs layer and contact 6 to it above layer 4. Other side of substrate 1 carries n-GaAs layer 1 with contacts of drain 8, source 9, and electrode of gate 10. Layer 7 has heavily doped n⁺-GaAs region electrically connected to heavily doped region 12 of substrate. EFFECT: improved heat transfer of laser and degree of integration of circuits built around these lasers. 1 dwg