LASER WITH FIELD EFFECT CONTROL Russian patent published in 1996 - IPC

FIELD: optical electronics. SUBSTANCE: device has n⁺ GaAs substrate, which one side is covered with layers having heterogeneous structure and GaAs layer with ohmic contact. Another side of substrate is covered by p layers of GaAs with contacts for drain, source and gate electrode. Single crystal insulating layer of Al GaAs is inserted between latter layer and substrate. Groove with slope walls is produced in layers. Device may be used in transmitting units. EFFECT: improved operations in continuous generation mode due to improved heat removal. 1 dwg