OPTICAL-ELECTRONIC MEMORY GATE Russian patent published in 1996 - IPC

FIELD: computer engineering. SUBSTANCE: device is based on heavily doped substrate of gallium arsenide, which has emitting p-n heterogeneous junction of heterogeneous layers of Ga_1-yAl_yAs and Ga_1-2Al₂As,, where Y>2. Latter layer covers substrate and have same conductance as substrate. In addition device has active transistor layer with contacts for source and drain and gate electrode, which is separated from said heterogeneous layers by insulating layer of solid non-conducting solution of Ga_1-yAl_yAs. Gate electrode has groove which is produced in active and insulating layers and goes down to Ga_1-xAl_xAs layer. Bottom of groove has ohmic contact, which area is less than area of bottom of groove, and galvanic contact. Slightly doped layer of gallium arsenide is introduced between active transistor layer and insulating layer. Thickness of introduced layer d_н and doping factor N_н depend on active layer thickness d_a and active layer doping factor by equation N_н. Mole ratio of aluminum in said semiconductor and insulating layers conforms to equation X>Y. EFFECT: increased maximal temperature of operating range. 1 dwg