METHOD OF DETERMINATION OF PARAMETERS OF TRAPS IN SEMICONDUCTOR MATERIALS Russian patent published in 1996 - IPC

FIELD: electronics, physics. SUBSTANCE: invention relates to physical methods of examinations. Measurement of parameters is conducted at two values of sample temperature. Pairs of pulses of voltages charging traps are fed to sample. Length of pulses is same but exceeds time of transition period of charge of trap. Areas under curves of time dependence of transient currents registered during charge of traps are measured. Measurement is conducted at two different values of time intervals between pulses. Both intervals meet condition , where and are areas under curves of transient currents. At one of temperatures amplitude of pulses is increased till difference of and reaches maximum. Further on parameters of trap are calculated by found values. EFFECT: increased accuracy in determination of parameters of traps.