METHOD OF DETERMINATION OF PARAMETERS OF SEMICONDUCTOR MATERIALS AND HETEROSTRUCTURES Russian patent published in 1995 - IPC

Abstract RU 2028697 C1

FIELD: checking of electrophysical parameters. SUBSTANCE: essence of invention consists in application of sequence of voltage pulses to sample which amplitude changes by linear law with specified duration, in measurement of electric parameter of applied voltage and in determination of parameters of structures with the help of obtained dependence. Charge running off from investigated sample after disconnection of applied voltage is measured as electric parameter. After ending of each voltage pulse to time moment t dependence of charge of charge on charge of amplitude of pulses is measured by which concentration of dopant and value of potential barrier over separation boundary can be determined, for instance. Duration of pulses and time t of measurement of change running off p+-i-n+ s can be changed to take into account contribution of traps. EFFECT: expanded class of investigated structures due to use of MIS and 10-6- 102 structures which capacitance depends on bias voltage and state of charge of traps, increased sensitivity and simplified circuit for realization of method. 3 cl, 3 dwg

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RU 2 028 697 C1

Authors

Poljakov V.I.

Ermakova O.N.

Ermakov M.G.

Perov P.I.

Dates

1995-02-09Published

1991-05-05Filed