PHOSPHOROSILICATE GLASS PRODUCTION METHOD Russian patent published in 1995 - IPC

Abstract SU 1415670 A1

FIELD: microelectronics production. SUBSTANCE: to stabilize phosphoric anhydride share in film steam-gas mixture, composed of monosilane, oxygen, argon and trimethylphosphate in shares, monosilane 2.0 8.0; oxygen - 5.-50.0; trimethylphosphate 0.02 2.0; argon balance, is passed over bases, heated up to 200 500 C temperature in reactor of decreased pressure, trimethylphosphate vapor is through tube introduced in hot zone of reactor and monosilane and oxygen vapor are fed in cold zone of rector. EFFECT: increased quality of films. 1 dwg, 1 tbl

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SU 1 415 670 A1

Authors

Vasil'Ev V.Ju.

Dukhanova T.G.

Dates

1995-10-27—Published

1986-06-05—Filed