PROCESS OF PLASMA-CHEMICAL PRECIPITATION OF FILMS OF PHOSPHOROUS-SODA-LIME GLASS Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: semiconductor substrates with structures on integrated circuits are placed into reactor, air is evacuated from it and then reactor is injected with mixture of monosilane, nitrogen monoxide, phosphine, inert gas and ammonia. Film of phosphorous-soda-lime glass is precipitated in plasma of HF and SHF discharge at temperature 20-450 C and under pressure 13.3-26.6 Pa. Proportion of ingredients in mixture is: nitrogen monoxide-monosilane 50-100; phosphine-monosilane 0.03-0.08; nitrogen monoxide-ammonia 5.0-25.0. EFFECT: increased quality of films by reduction of presence of defects and improved passivating capability. 1 tbl