METHOD OF OBTAINING SILICON DIOXIDE LAYER Russian patent published in 2014 - IPC H01L21/316 

FIELD: chemistry.

SUBSTANCE: in a method of obtaining a silicon dioxide layer, which includes loading of a semiconductor substrate into a reactor, heating the semiconductor substrate to a required temperature in the range of 300-500°C, supply of vapours of alcoxysilane, preferably tetraethoxysilane, and an oxidiser in the form of a mixture of oxygen and ozone, with concentration of the latter in the former in the range of 0-16 wt %, support of working pressure in the reactor in the range of 0.5-760 mm Hg, the process of precipitation is performed in cycles, consisting of successive impulses of alcoxysilane and the oxidiser, separated by an impulse of blow-off inert gas, with the duration of impulses constituting 0.1-20 seconds, and a number of cycles being calculated from the required layer thickness and a rate of precipitation of the silicon dioxide layer during one cycle.

EFFECT: invention makes it possible to provide a uniform growth of the silicon dioxide layers under conditions of the process realisation, excluding the interaction of initial reagents or their residues that have not reacted in the reactor, and provides the interaction of the reagents on the heated surface of the substrate in an adsorption layer.

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