MANUFACTURING PROCESS FOR P-N STRUCTURES IN InAs-InGaAs SYSTEMS Russian patent published in 1995 - IPC

FIELD: semiconductor engineering. SUBSTANCE: rear side of source InAs substrate is aligned with surface of plate made of inert heat-resistance material, such as sapphire. Face side of substrate is brought in contact with saturated solution which is InGaAs melt with Ga content of 0.01-0.06 at. fractions. In the course of isothermic exposure to 970-1030 K, melt droplets migrate to rear side of substrate. Conditions under which continuous indium film is formed on rear side of substrate are determined. This film functions as resistive contact. InGaAs buffer layer is built up on rear side of substrate from the same solution-melt. By replacing melts, p- and n-layers are formed and structure is separated from substrate. Resistive contact is formed prior to manufacturing working layers of structure within single process cycle using solution-melt for further build-up of buffer layer. EFFECT: facilitated manufacture of resistive contact, reduced structure manufacturing time.