METHOD FOR MANUFACTURING A PHOTOELECTRIC CONVERTER BASED ON GaInAsSb Russian patent published in 2023 - IPC H01L31/18 

FIELD: semiconductor devices.

SUBSTANCE: method for manufacturing a photoelectric converter based on GaInAsSb includes sequential deposition of layers of n-GaInAsSb, p-GaInAsSb and p-GaSb on an n-GaSb substrate in isothermal mode by liquid-phase epitaxy with layer thicknesses, respectively, 1-5 μm, 0.5-1.5 µm and≤ 0.5 µm, with the level of their doping, respectively, n=(4-9)⋅10¹⁷ at/cm³, p = (1-5)⋅10¹⁸ at/cm³ and p = (5⋅10¹⁸-1⋅10¹⁹) at/cm³. The band gap and the compositions of GaInAsSb solid solutions are determined by the purpose of the structure, the type of infrared radiation, and its wavelength.

EFFECT: simpler manufacturing of a photoelectric converter with high spectral sensitivity in the wavelength range λ = 0.8-2.2 nm.

5 cl, 2 ex, 1 dwg