MATRIX PHOTODETECTOR Russian patent published in 1995 - IPC

FIELD: microphotoelectronics. SUBSTANCE: matrix photodetector includes photosensitive elements arranged between signalling wires. Photosensitive elements are produced from semiconductor placed on semi-insulating semiconductor substrate. Signalling wires are positioned in parallel to each other. Potential wires are manufactured on opposite side of substrate under photosensitive elements in parallel to signalling wires. Concentration of deep acceptor centers not filled by electrons lies within interval 5·10¹⁵-10¹⁶cm^-3. Product of concentration of fine donor dope in semiconductor of photosensitive elements by its thickness is not more than 10¹²cm^-2. Operation of matrix photodetector is based on transfer of photosensitive elements into high-resistance state with flow of current higher than threshold one. High-resistance state exhibits high sensitivity to radiation. With illumination opening threshold of photosensitive element shifts. Reading of photosensitive element is performed by successive application of positive voltage to potential wires. Sensitivity of matrix photodetector can reach 10¹²W/cm² per element. Photosensitive element of matrix photodetector of 10 x 10 format can be interrogated during several microseconds. Matrix photodetector provides for nondestructive reading which enables optical information to be stored and added. EFFECT: increased photosensitive and speed of response, provision for nondestructive reading. 2 dwg