MATRIX PHOTODETECTOR Russian patent published in 1995 - IPC

FIELD: microphotoelectronics. SUBSTANCE: matrix photodetector includes crystal of matrix of photosensitive elements engaged to metal columns with silicon circuit of preliminary signal processing. Circuit is built on two silicon crystals interjoined with rear sides. Silicon crystals are electrically connected around the periphery with flexible microstubs. Dimensions of silicon crystals are smaller than dimension of crystal of matrix of photosensitive elements by 10-40% of spacing of matrix of photosensitive elements, that is why microstubs do not protrude beyond dimensions of matrix of photosensitive elements. Dimensions of edge photosensitive elements in direction of cutting of crystal of matrix of photosensitive elements are smaller by 5-20% than spacing of matrix in order to maintain their serviceability. Photodetecting matrix of large size is assembled from matrix photodetectors by means of cementing them with light-sensitive side to transparent backing or by their arrangement on supporting pedestal with hole to feed in supply and control voltages. EFFECT: provision for assembly of photodetector matrix of large sizes. 1 dwg