METHOD OF MANUFACTURING MULTI-ELEMENT IR PHOTODETECTOR Russian patent published in 2017 - IPC H01L31/18 H01L27/14 

FIELD: physics.

SUBSTANCE: multi-element photodetector based on indium antimonide includes a photosensitive element matrix (FSEM) with an antireflection coating on the illuminated side of photosensitive elements (FSE) connected by microcontacts to the readout circuit. The proposed method includes passivation of the illuminated surface of the FSE before the formation of an antireflection coating, which consists in that before removal of the antireflection coating from the FSE surface by ionic etching, the oxide layer is removed without depressurization of the vacuum chamber, which reduces the rate of surface recombination of the photogenerated carriers and thereby increases the quantum efficiency and eliminates the capture of carriers by slow states.

EFFECT: increasing the sensitivity, improving the uniformity of the photodetector array parameters in mass production by improving the quantum efficiency of the photosensitive elements.

3 cl, 1 dwg