FIELD: physics, photography.
SUBSTANCE: invention relates to multielement or matrix photodetectors based on indium antimonide, which are sensitive in the 3-5 mcm spectral range. The design of the matrix photodetectors increases output of non-defective articles and improves uniformity of parameters of matrix photodetectors in serial production owing to increase in quantum efficiency and elimination of the memory effect and the effect of the adhesive joint on the value of the photocurrent of photosensitive cells. The indium antimonide-based multielement photodetector includes an array of photosensitive cells with a thin base, switched by a multiplexer. The rear side of the array of photosensitive cells is coated with an antireflection coating, which contains an embedded charge whose sign is opposite that of majority charge carriers in the base of the array of photosensitive cells.
EFFECT: design of a matrix photodetector.
3 dwg
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Authors
Dates
2014-06-10—Published
2012-07-31—Filed