METHOD FOR DETERMINING ELECTROPHYSICAL PARAMETERS OF ELECTROLYTE- SEMICONDUCTOR PHASE BOUNDARY Russian patent published in 1996 - IPC

FIELD: metrology. SUBSTANCE: main current pulse and additional pulse of opposite polarity are passed through electrolyte-semiconductor phase boundary. Parameters of pulses are such that total charge inserted by main and additional pulses equals zero. Voltage increment across phase boundary is measured during time interval between start of main pulse and end of additional pulse. Increment integral value is used to determine electrophysical parameters of phase boundary according to calibrated relationships obtained earlier. By measuring increment integral at two fixed pulse lengths surface state density is determined as function of time or recharge of charged states across phase boundary. EFFECT: improved accuracy and informative capacity in determining electrophysical parameters of electrolyte-semiconductor phase boundary. 2 cl, 3 dwg