METHOD OF ELECTRON-PHONON DRAG Russian patent published in 2009 - IPC H01L37/00 

FIELD: physics; electricity.

SUBSTANCE: electrodes composing rectifying contact with material are arranged on surface or in bulk of semiconductor material or material layer on semi-insulating or dielectric substrate. Furthermore electrode distance (D) is chosen considerably smaller than penetration depths into electric field material (L), (D<<L), caused by contact potential difference. Minimum electrode distance D_min=20 mcm, maximum electrode distance D_max=300 mcm. Before, after or during electrodes are to be arranged, or before, after or during electrode gap is made, the material is introduced with electronicvibrational centres (EVC) concentrated (N) within 2·10¹² cm^-3 to 3·10¹⁷ cm^-3. Material temperature is reduced to Debye temperature of, and temperature in material layer on substrate is reduced to Debye temperature of substrate phonons. Temperature difference ΔT=(T₂-T₁) is ensured between electrodes so that greater of temperatures T₁ and T₂ is not melting temperature of electrodes, material or substrate, and smaller of these temperatures is to be less than T_m-2θ, where θ is half-width of temperature dependence band of electron-phonon drag.

EFFECT: possibility to realise the effect at Debye temperatures of crystal phonons and possibility to control effect magnitude.

12 cl, 1 tbl, 11 dwg