FIELD: physics; electricity.
SUBSTANCE: electrodes composing rectifying contact with material are arranged on surface or in bulk of semiconductor material or material layer on semi-insulating or dielectric substrate. Furthermore electrode distance (D) is chosen considerably smaller than penetration depths into electric field material (L), (D<<L), caused by contact potential difference. Minimum electrode distance Dmin=20 mcm, maximum electrode distance Dmax=300 mcm. Before, after or during electrodes are to be arranged, or before, after or during electrode gap is made, the material is introduced with electronicvibrational centres (EVC) concentrated (N) within 2·1012 cm-3 to 3·1017 cm-3. Material temperature is reduced to Debye temperature of, and temperature in material layer on substrate is reduced to Debye temperature of substrate phonons. Temperature difference ΔT=(T2-T1) is ensured between electrodes so that greater of temperatures T1 and T2 is not melting temperature of electrodes, material or substrate, and smaller of these temperatures is to be less than Tm-2θ, where θ is half-width of temperature dependence band of electron-phonon drag.
EFFECT: possibility to realise the effect at Debye temperatures of crystal phonons and possibility to control effect magnitude.
12 cl, 1 tbl, 11 dwg
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Authors
Dates
2009-03-20—Published
2006-11-07—Filed