METHOD OF PRODUCING LOW-ALLOY LAYER OF GAAS BY LIQUID-PHASE EPITAXY Russian patent published in 2020 - IPC H01L21/208 

FIELD: microelectronic equipment.

SUBSTANCE: invention relates to microelectronic equipment, and more specifically to methods of growing semiconductor gallium arsenide layers by liquid-phase epitaxy. Method includes composition of initial charge, loading of gallium, components of charge and substrates of GaAs into graphite growth device, and then into reactor, heating the reactor contents in the dehydrated atmosphere with subsequent annealing in the same atmosphere, contacting the substrate with the obtained melt solution, further forced cooling for growth of GaAs epitaxial layer, removal of substrate coated with GaAs layer from under melt solution. To the charge, at least, silicon dioxide and tin are added.

EFFECT: technical result achieved during implementation of the developed method consists in simultaneous provision of low series resistance, high breakdown voltage and low capacitance in end devices.

1 cl, 1 dwg