FIELD: semiconducting materials. SUBSTANCE: epitaxial layer is applied on the GaAs substrate from a solution-melt fed by a crystal-source having the following composition (in atomic %): 1.0-17.0 Al, 0.5-41.0 P, 9.0-49.5 As, Ga - the rest. Composition of the solution-melt is as follows (in atomic %): 0.0019-0.0560 Al, 0.013-2.050 P, 3.58-22.30 As, 0.8660- 92.4065 In, Ga - the rest. The process is carried out with a temperature gradient between the source and the substrate. Compositionally uniform layers 62-96 micron thick are obtained useful for developing optic-electronic devices operating within the spectral range 0.59-0.87 micron. EFFECT: increased quality of the heteroborder, extended spectral range of material. 2 tbl
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