METHOD FOR MANUFACTURING THE SEMICONDUCTOR P-I-N STRUCTURE BASED ON GAAS-AlGAAS COMPOUNDS BY LIQUID-PHASE EPITAXY Russian patent published in 2021 - IPC H01L21/208 

FIELD: power microelectronic engineering.

SUBSTANCE: invention relates to power microelectronic engineering and more specifically to methods of manufacturing high-voltage p-i-n structures from A3B5 compounds. A method of manufacturing a semiconductor p-i-n structure based on GaAs-AlGaAs compounds by liquid-phase epitaxy is carried out by preliminary annealing the initial charge-melt solution and growing in a single technological cycle a multilayer semiconductor AlGaAs structure formed from a composition of successive AlGaAs epitaxial layers on a GaAs substrate. Aluminum is preliminarily introduced into the initial charge in an amount of 0.2-0.7 at.%. The working lightly alloyed p0-i-n0 layer is formed by forced cooling of the growth system at a rate of 0.2-2.0C / min from a temperature of 820-880C up to a temperature of 700-750C.

EFFECT: semiconductor p-i-n structure made in accordance with the invention makes it possible to increase the limiting operating temperature and ensures soft switching of diodes made of such a structure from a conducting to a locked state which reduces the amplitude of sharp overvoltage surges on the switched off diode and prevents the appearance of high-frequency electromagnetic interference.

4 cl