FIELD: electronic engineering; manufacture of semiconductor devices, such as MIS transistors, on galium arsenide substrate. SUBSTANCE: insulating material is deposited onto galium arsenide substrate that has drain and source regions by using pyrolysis method. Zink diethyl dithiocarbamate is used as gas mixture. EFFECT: improved transconductance of transistors. 1 tbl
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Authors
Dates
1996-05-27—Published
1989-02-03—Filed