TRANSISTOR MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract SU 1597018 A1

FIELD: electronic engineering; manufacture of semiconductor devices, such as MIS transistors, on galium arsenide substrate. SUBSTANCE: insulating material is deposited onto galium arsenide substrate that has drain and source regions by using pyrolysis method. Zink diethyl dithiocarbamate is used as gas mixture. EFFECT: improved transconductance of transistors. 1 tbl

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SU 1 597 018 A1

Authors

Olejnik S.P.

Matyna L.I.

Il'Ichev Eh.A.

Lipshits T.L.

Inkin V.N.

Emel'Janov A.V.

Poltoratskij Eh.A.

Varlamov I.V.

Pekarev A.I.

Dates

1996-05-27Published

1989-02-03Filed