FIELD: microelectronics; field-effect transistors operating at frequencies of several tens of GHz. SUBSTANCE: gallium arsenide is used for substrate, niobium or niobium nitride for gate. Masking coat is formed for producing source and drain regions. Then heat treatment is made in dry oxygen environment at 400-600 C. Substrate is annealed in hydrogen environment at 640-700 C. Source and drain regions are formed. EFFECT: improved reproducibility of gaps between active regions. 2 cl, 10 dwg
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