FIELD: vacuum ion-plasma engineering; instrument engineering. SUBSTANCE: method includes alternate precipitation of plasma flow on base and irradiation of base by beams of acceleration ions in every cycle. The above-indicated operation are performed with time shift between plasma flow and ion beam pulses. Time shift is set to exceed time of plasma recombination in chamber volume. Pulse repetition period, coating growth rate and mixing efficiency are selected from definite conditions. Device intended for method realization has vacuum chamber which accommodates holder with base, pulse-arc evaporator, pulse-arc implanter of accelerated ions including coaxially-positioned cathode, ignition electrode and anode closed by emission grid. It also contains secondary power supply source, generator of pulse-arc discharge and accelerating voltage source. In addition, it has voltage source and generator of paired control pulses. Implanter has additionally accelerating and protective grounded grids and suppressor grid arranged between the above-indicated grounded grids and connected to negative source. Generator of paired control pulses is connected to secondary power supply source and to pulse-arc discharge generator. In addition, device may contain at least three evaporators mounted for plasma generation coaxially with ion beam and for turning of plasma flow axes relative to ion beam axis. Secondary power supply source includes charging unit, ignition pulse generator, group of capacitive storages, and group of resistors. Resistors and capacitor values are selected from definite relations. Gevin method and device make it possible to enhanced efficiency of coating application process, to improve radiation safety and to enhanced reliability of device operation. EFFECT: enlarged functional capabilities. 5 cl, 6 dwg
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Authors
Dates
1999-11-10—Published
1996-12-31—Filed