FIELD: microelectronic devices technology. SUBSTANCE: resistive mask is formed onto blank of template. Chroimium film is subjected to reactive ion-beam etching throught the resistive mask in halogen-containing gas medium; the film is etched for 80-90% of its initial thickness. Then ion-beam etching is conducted in inert gas for removing non-volatile fluoride-chromic chrome compounds, which have been formed after reactive etching. Residual chrome film is stored onto the template with thickness of , which provides absense of etching of template blank. Then chemical etching of residual film is carried out in etching agent known, for example, cerium agent. Templates produced may be used for far UV spectral range. Minimal sizes of elements are 0.4 mcm. Etching grooves are absent. EFFECT: improved optical properties of templates.
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Authors
Dates
1996-01-20—Published
1988-12-08—Filed