FIELD: technology of microelectronics. SUBSTANCE: substrate with working layer is covered by resistive layer and pattern with negative profile is generated by means of electric lithography. Additional development of resistive layer is done by reactive ion- beam etching in oxygen medium at same angle as reactive ion- beam etching of working layer. This results in possibility to remove rest of resistive layer in shadowed area which is caused by negative profile of resistive mask. This leads to processing a working layer without any rest resistive layer. This increases quality of generated submicron structures. EFFECT: increased precision of structure generation. 1 dwg
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