METHOD OF MAKING A SILICON X-RAY IMAGE Russian patent published in 2020 - IPC G01T1/06 G03B42/02 

FIELD: physics.

SUBSTANCE: invention can be used for making a silicon X-ray image. Essence of the invention consists in that the method includes processes of preliminary selection of plane-parallel silicon plates, sputtering of conductive adhesive sublayers from light (i.e. with low atomic weight) metals on the working surface of the silicon plate (substrate), formation on the working surface of the resistive mask, electrodeposition of the X-ray absorbing masking layer from heavy metals through the resistive mask, its subsequent removal and formation of the support ring and the template support membrane by partial removal of the silicon plate central part from its back side by etching, formation of support ring and template bearing membrane is performed by means of plasma-chemical etching through stencil or pre-formed directly on rear side of plate protective mask, stencil and protective mask should be made of materials characterized by relatively low rate of etching compared to silicon, for example, aluminum or its alloys.

EFFECT: technical result is simplification of X-ray fabrication.

1 cl, 4 dwg