FIELD: radio engineering, communication.
SUBSTANCE: invention can be used to make a microwave field-effect transistor. The method includes forming an n+-n-i-type semiconductor structure by ion implantation of semi-insulating gallium arsenide wafers with silicon ions, wherein after forming the n+-n-i-type structure and topographical features of the transistor on said structure, the method includes further doping of the wafer with silicon ions and implantation of boron ions into the wafer to considerably reduce the transistor channel, and a passive weakly conducting layer is formed on the open surface of the n+-n-i-structure.
EFFECT: forming a microwave field-effect transistor in the millimetre wavelength range with high output power and high power gain.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD TO PRODUCE MICROWAVES OF FIELD HIGH POWER PSEUDOMORPHIC TRANSISTOR | 2016 |
|
RU2633724C1 |
| MULTIFUNCTIONAL MICROWAVE MONOLITHIC INTEGRATED CIRCUIT BOARD BASED ON MULTILAYER SEMICONDUCTOR STRUCTURE | 2014 |
|
RU2560998C1 |
| PROCESS OF MANUFACTURE OF HIGH-POWER SHF FIELD-EFFECT TRANSISTORS WITH SCHOTTKY BARRIER | 2002 |
|
RU2227344C2 |
| METHOD TO MANUFACTURE FIELD TRANSISTORS WITH SELF-ALIGNED GATE OF SUBMICRON LENGTH | 2010 |
|
RU2436186C2 |
| METHOD FOR MANUFACTURING MICROWAVE FIELD TRANSISTOR WITH A SCHOTTKY BARRIER | 2022 |
|
RU2793658C1 |
| METHOD FOR MANUFACTURING A GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR | 2017 |
|
RU2668635C1 |
| UHF FIELD-EFFECT TRANSISTOR WITH A SCHOTTKY BARRIER | 2021 |
|
RU2784754C1 |
| AMPLIFIER | 1994 |
|
RU2069448C1 |
| PRODUCTION METHOD OF SUPER-HIGH FREQUENCY (SHF) FIELD-EFFECT TRANSISTOR WITH SCHOTTKI BARRIER | 2008 |
|
RU2361319C1 |
| MODULATION-DOPED FIELD-EFFECT TRANSISTOR | 2013 |
|
RU2539754C1 |
