INVERTER Russian patent published in 1996 - IPC

FIELD: communication devices, memory units. SUBSTANCE: device has conducting-insulating gallium arsenide substrate 1, first non-doped gallium arsenide layer 2, which thickness is and background concentration of donor doping agent is 10¹⁴ cm^-3, first n-conductance heavily doped layer 3, which thickness is and background concentration of doping agent is 10²⁰ cm^-3, third non-doped gallium arsenide layer 4, which thickness is and background concentration of doping agent is 10¹⁴ cm^-3, second p-conductance heavily doped layer 5, which thickness is and background concentration of acceptor doping agent is 10²⁰ cm^-3, second non-doped gallium arsenide layer 6, which thickness is and background concentration of doping agent is 10¹⁴ cm^-3. In addition device has source areas 7 and drain areas 8, which go down to first non-doped are 2. Galvanic coupling 9 and 10 is provided between gates 11 of adjacent transistors having different conductance in areas of sources and drains as well as between drain 8 of one transistor and source 7 of another one. EFFECT: decreased scattered power, decreased variation in characteristics of inverters over surface of crystal. 1 dwg