FIELD: electricity.
SUBSTANCE: method of field effect transistor production with Schottky barrier provides for forming active instrument area with working n and contacting n+ layers, generating ohm contacts, applying primary dielectric layer and making gate window by gallium arsenide etching up to the surface. After that, the window is closed by the second dielectric layer, which is then also subject to etching until it is completely removed from the first dielectric layer and gallium arsenide appears in the window constricted by the second dielectric layer. The next step includes etching of groove in n+ layer of gallium arsenide and producing T-shaped gate in the constricted window of dielectric and in the groove made in n+ layer of gallium arsenide. The first dielectric layer is created by the sequential application of several dielectric layers having different etching speed.
EFFECT: improved electrical parameters of field effect transistor with Schottky barrier.
2 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MANUFACTURE OF FIELD-EFFECT TRANSISTORS ON THE BASE OF GALLIUM ARSENIDE | 0 |
|
SU1831731A3 |
| METHOD OF MANUFACTURING SCHOTTKY-BARIER-GATE FIELD-EFFECT TRANSISTORS | 1979 |
|
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| PROCESS OF MANUFACTURE OF FIELD-EFFECT TRANSISTORS WITH SCOTT GATE MADE OF GALLIUM ARSENIDE | 1992 |
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