METHOD FOR MANUFACTURING OF IMPROVED MULTILEVEL COPPER METALLISATION USING DIELECTRICS WITH ULTRA LOW DIELECTRIC CONSTANT (ULTRA LOW-K) Russian patent published in 2013 - IPC H01L21/768 

FIELD: electrical engineering.

SUBSTANCE: problems of copper metallisation with reduction of design limitations: - high structure imperfection of copper conductors and electromigration at the boundary of copper with adjacent dielectrics; - rapid increase of specific resistance at reduction of conductor width; - significant increase of interlayer capacitance are suggested to solve by the method for manufacturing of improved multilevel copper metallisation using dielectrics with ultra low dielectric constant by means of local electrochemical copper deposition applying current potential to the nucleating layer open for deposition at the bottom of the groove formed in the auxiliary layer. Porous dielectric is formed by prefabricated horizontal copper conductors with dense dielectric with ultra low-K placed on top of conductors and copper conductors in-built into the dense dielectric.

EFFECT: in the suggested path there is possibility to create column structure in copper conductors even at the stage of their electrochemical deposition; to increase square area of a vertical conductor; the method prevents etching of grooves and vertical holes in porous dielectric.

14 cl, 15 dwg