METHOD OF MAKING MULTILAYER PHOTOCELL CHIPS Russian patent published in 2013 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making multilayer photocell chips involves growing a photosensitive multilayer semiconductor structure on a germanium substrate, successively creating a passivating layer and a contact layer on the surface of the photosensitive multilayer structure. The method also involves creating solid ohmic contacts on the rear surface and the front surface of the photosensitive multilayer semiconductor structure, forming a contact grid by local etching, through a photoresist mask on a front surface of the photosensitive multilayer semiconductor structure, of an ohmic contact and a contact layer by plasma-chemical etching and ion-plasma etching. Sputtering of an antireflection coating, dividing the structure into chips and passivating the side surface of the chips with a dielectric are then carried out.

EFFECT: improved method.

8 ex, 5 dwg