FIELD: microelectronics. SUBSTANCE: essence of this method resides in that integrated circuit connections are bonded by applying bonding material based on aluminum and its alloys added with 0.1 to 1.0 % titanium in vacuum interlock plant at pressure of ρ1 in working chamber and pressure of 10-1-9,6·10-1) in common chamber, content of active gaseous impurities in plasma discharge medium not exceeding ~1,33·10-3Pa. EFFECT: higher yield of sound integrated circuits due to prevention of extra growth of O2 ·10-6Pa,N210-5Pa,CnHm 1,5·10-7 AITI/AITISI films and migration of electrons. 1 tbl
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Authors
Dates
1994-07-30—Published
1989-12-04—Filed