FIELD: measurement equipment.
SUBSTANCE: in the method to manufacture a thin-film nano and microelectromechanical system of a high temperature sensor of mechanical values on a planar side of an elastic element by methods of vacuum sputtering they produce a heterogeneous structure from nano and microsized films of materials, containing thin-film dielectric, resistive strain and contact layers. Strain elements (resistive strain sensors) are formed, as well as contact conductors and contact sites to them. A resistive strain layer is formed by the method of magnetron sputtering in a vacuum chamber with simultaneous use of two targets from nickel and titanium. The elastic element with a dielectric layer formed on it is installed on a carousel, heated, argon pressure is pulled, and then the carousel is rotated, at the same time current densities are set in areas of sputtering of the first and second targets, based on their certain ratio. Afterwards the elastic element is maintained in vacuum at higher temperature for several hours.
EFFECT: expansion of temperature range of sensor operation, increased reproducibility of such parameters of resistive strain sensors as electric resistance and temperature coefficient of resistance, reduced temperature sensitivity of sensors.
5 dwg
