FIELD: integrated microelectronics for processing optical information.
SUBSTANCE: proposed device is assembled on semiconductor substrate and has n locations of signal input and read-out delay and storage devices, where n is quantity of delay and storage stages. Each location of input device has first MIS transistor whose source is connected to photodetector output, gate, to output of amplifier whose input is connected to source of first MIS transistor; each location of signal read-out delay and storage device has second MIS transistor whose source is connected to drain of first MIS transistor of respective input device, integrating capacitor, third MIS transistor whose gate is connected to respective control-voltage bus, drain, to multiplexer input, and source, to one of plates of integrating capacitor whose other plate is connected to semiconductor substrate; is also has memory unit saving information about defective photodetector channels. Each location of signal read-out delay and storage device has in addition two MIS transistors, one more integrating capacitor, and two groups of control buses, n buses per group. One of plates of additional integrating capacitor is connected to source of second MIS transistor and other plate, to semiconductor substrate. First additional MIS transistor has its source connected to gate of second MIS transistor, gate, to respective ith additional control bus of first group, where i = 1, 2,…, n, drain is connected to memory output, and drains of all n devices are connected to sources of second additional MIS transistor whose gate is connected to respective ith additional control bus of second group. Photodetector device has matrix of infrared photodetectors and signal read-out delay and storage device.
EFFECT: enhanced sensitivity of photodetector device.
1 cl, 2 dwg
